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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3412 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 500V (Min) *High Power Dissipation APPLICATIONS *Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 1300 500 6 8 10 50 150 V V .cn mi e V A ICM Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3412 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V ICES Collector Cutoff Current VCE= 1300V; RBE= 0 0.5 mA Switching Times tstg Storage Time tf Fall Time w w scs .i w IC= 5A; IB1 = 1A .cn mi e 3 s 0.2 s isc Websitewww.iscsemi.cn |
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